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| bzt2v0...BZT75 silicon epitaxial planar zener diodes in quadro melf case especially for automatic insertion. the zener voltages are graded according to the international e24 standard. other tolerance, non-standard and higher zener voltages upon request. absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 storage temperature range t stg - 55 to + 175 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t a = 25 parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that electrodes ar e kept at ambient temperature ls-34 quadromelf dimensions in mm 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 type zener voltage 1) dynamic resistance reverse leakage current temp coefficient of zener voltage v znom v zt at i zt z zt z zk at i zk t a = 25 t a = 125 at v r (v) (v) (ma) max. ( ? )max. ( ? ) (ma) max. (a) max. (a) (v) tkvz (%/k) bzt2v0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06 bzt2v2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06 bzt2v4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06 bzt2v7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06 bzt3v0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05 bzt3v3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05 bzt3v6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05 bzt3v9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05 bzt4v3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03 bzt4v7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02 bzt5v1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02 bzt5v6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05 bzt6v2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06 bzt6v8 6.8 6.4...7.2 5 8 150 1 0.1 2 3 0.03...0.07 bzt7v5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07 bzt8v2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08 bzt9v1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09 bzt10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.10 bzt11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11 bzt12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11 bzt13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11 bzt15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11 bzt16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11 bzt18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11 bzt20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.04...0.11 bzt22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12 bzt24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12 bzt27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12 bzt30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12 bzt33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12 bzt36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12 bzt39 39 37...41 5 90 500 0.5 0.1 5 30 0.04...0.12 bzt43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12 bzt47 47 44...50 2.5 110 600 0.5 0.1 5 38 0.04...0.12 bzt51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12 bzt56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12 bzt62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 bzt68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 BZT75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 1) tested with pulses t p = 20 ms. bzt2v0...BZT75 silicon epitaxial planar zener diodes 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech |
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